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| Product Name: |
SiC Coated Support Tray for PE2061S
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| Specifications |
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The SiC coated support tray PE2061S is a critical structural component specifically designed for silicon epitaxy systemssuch as LPE and MOCVD equipment. It works in conjunction with a barrel-shaped susceptor to provide stable support andprecise alignment for wafers or substrates during the epitaxial growth process. As a key element within the thermal zone ofbarre-type reactors, the tray not only offers mechanical support but also plays a vital role in maintaining uniform thermaldistribution, controlled gas flow, and overall process stability.
Co***red to conventional planar epitaxy systems, barre-type MOCVD reactors feature larger reaction chambers andhigher wafer loading capacity,enabling significantly improved production efficiency. However, this also introduces greatertechnical challenges:the internal components must withstand prolonged operation under high temperatures,hydrogen-richenvironments, and halide-based precursor chemistries-all while maintaining exceptional uniformity and minimizingcontamination. The PE2061S support tray was developed specifically to meet these stringent demands.
The core structure is made of high-purity graphite, chosen for its excellent thermal conductivity and shock resistance,ensuring dimensional stability during aggressive thermal cycling. The surface is coated with a dense and uniform siliconcarbide (SiC) layer using advanced CVD technology. This coating dramatically improves corrosion resistance, oxidationstability, and wear performance,while effectively suppressing particle generation and contamination-key requirements insemiconductor epitaxy processes. |
| Company: |
Semiconductor(Ningbo Miami Advance***terial Technology Co., LTD)
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| Contact: |
Mr. kirk zhong |
| Address: |
No. 1958 Jiangnan Road, Ningbo High tech Zone,Zhejiang Province, 315201, China |
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| Tel: |
15300650061 |
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